1. Wen Wan, Rishav Harsh, Paul Dreher, Fernando de Juan and Miguel M. Ugeda, Superconducting dome by tuning through a Van Hove singularity in a two-dimensional metal, npj 2D materials and applications 7:41 (2023) 2. Wen Wan, Paul Dreher, Rishav Harsh, Francisco Guinea and Miguel M. Ugeda, Observation of superconducting collective modes from competing pairing instabilities in single-layer NbSe2, Advanced materials 34 (41), 2206078 (2022) 3. Wen Wan, Darshana Wickramaratne, Paul Dreher, Rishav Harsh, I. I. Mazin and Miguel M. Ugeda, Nontrivial doping evolution of electronic properties in Ising-superconducting alloys, Advanced materials, 34 (26), 2200492 (2022) 4. Paul Dreher, Wen Wan (共一), Alla Chikina, Marco Bianchi, Haojie Guo, Rishav Harsh, Samuel Mañas-Valero, Eugenio Coronado, Antonio J. Martínez-Galera, Philip Hofmann, Jill A. Miwa, and Miguel M. Ugeda, Proximity effects in the charge density wave order and superconductivity in single-layer NbSe2, ACS Nano 15 (12), 19430-19438 (2021) 5. Wen Wan, L. Chen, L. Zhan, Z. Zhu, Y. Zhou, T. Shih, S. Guo, J. Kang, H. Huang, and W. Cai, Syntheses and bandgap alterations of MoS2 induced by stresses in graphene-platinum substrates, Carbon 131, 26 (2018) 6. Wen Wan, L. Zhan, B. Xu, F. Zhao, Z. Zhu, Y. Zhou, Z. Yang, T. Shih, and W. Cai, Temperature-Related Morphological Evolution of MoS2 Domains on Graphene and Electron Transfer within Heterostructures, Small 13 (15), 1603549 (2017) 7. Wen Wan, H. Li, H. Huang, S. L. Wong, L. Lv, Y. Gao, and A. T. S. Wee, Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC (0001), ACS Nano 8 (1), 970–976 (2014) 8. Wen Wan, L. Zhan, T. Shih, Z. Zhu, J. Lu, J. Huang, Y. Zhang, H. Huang, X. Zhang, W. Cai, Controlled growth of MoS2 via surface-energy alterations, Nanotechnology 31 (3), 035601 (2019) 9. Wen Wan, X. Li, X. Li, B. Xu, L. Zhan, Z. Zhao, P. Zhang, S.Q. Wu, Z. Zhu, H. Huang, Y. Zhou, W. Cai, Interlayer coupling of a direct van der Waals epitaxial MoS2/graphene heterostructure, RSC Advances 6 (1), 323-330 (2016) |