姓    名:陈帅
职    称:副教授
出生年月:1989年10月
办公地点:东区七号楼533室
联系方式:chens@shu.edu.cn
个人简况


工作经历:

2023.01-至今    上海大学  材料基因组工程研究院  副教授

2021.04-2022.12  新加坡科技研究院(A*STAR)  高性能计算研究所(IHPC)  二级科学家(Scientist II)

2016.11-2021.03  新加坡科技研究院(A*STAR)  高性能计算研究所(IHPC)  一级科学家(Scientist I)


教育背景:

2011.09-2016.10  清华大学  摩擦学国家重点实验室  博士

2007.09-2011.06  北京科技大学  机械工程  学士


主要荣誉:

2022年  上海市领军人才(海外)

2022年  上海市浦江人才

2021年  新加坡科技研究院杰出服务(5年)奖

2016年  清华大学机械工程系学术新秀


研究方向

1. 多元合金成分-结构-性能关系

2. 二维材料生长-形貌-性能关系

3. 固液界面润湿和物质输运机理

获奖及发表


1. S. Chen, Z. H. Aitken, S. Pattamatta, Z. Wu, Z. G. Yu, D. J. Srolovitz*, P. K. Liaw*, Y.-W. Zhang*. Simultaneously Enhancing the Ultimate Strength and Ductility of High-Entropy Alloys via Short-Range Ordering. Nat. Commun. 2021, 12, 4953. Featured article.

2. S. Chen, T. Wang, X. Li, Y. Cheng*, G. Zhang*, H. Gao*. Short-Range Ordering and its Impact on Thermodynamic Property of High-Entropy Alloys. Acta Mater. 2022, 238, 118201.

3. S. Chen, Z. H. Aitken, S. Pattamatta, Z. Wu, Z. G. Yu, D. J. Srolovitz*, P. K. Liaw*, Y.-W. Zhang*. Chemical-Affinity Disparity and Exclusivity Drive Atomic Segregation, Short-Range Ordering, and Cluster Formation in High-Entropy Alloys. Acta Mater. 2021, 206, 116638.

4. S. Chen#, J. Gao#, M. S. Bharathi, G. Zhang, V. Sorkin, H. Ramanarayan, Y.-W. Zhang*. Origin of Ultrafast Growth of Monolayer WSe2 via Chemical Vapor Deposition. npj Comput. Mater. 2019, 5, 28.

5. S. Chen, J. Gao, M. S. Bharathi, G. Zhang, V. Sorkin, H. Ramanarayan, Y.-W. Zhang*. A Kinetic Monte Carlo Model for the Growth and Etching of Graphene during Chemical Vapor Deposition. Carbon 2019, 146, 399–405.

6. S. Chen, Z. H. Aitken*, Z. Wu, Z. Yu, R. Banerjee, Y.-W. Zhang. Hall-Petch and Inverse Hall-Petch Relations in High-Entropy CoNiFeAlxCu1-x Alloys. Mater. Sci. Eng. A 2020, 773, 138873.

7. S. Chen, J. Gao, M. S. Bharathi, G. Zhang, Y.-W. Zhang*. Etching Mechanisms, Kinetics and Pattern Formation in Multilayered WSe2. Mater. Today Adv. 2020, 7, 100075.

8. S. Chen, J. Gao, M. S. Bharathi, G. Zhang, M. Yang, J. Chai, S. Wang, D. Chi, Y.-W. Zhang*. Revealing the Grain Boundary Formation Mechanism and Kinetics during Polycrystalline MoS2 Growth. ACS Appl. Mater. Interfaces 2019, 11, 46090–46100.

9. S. Chen, Z. H. Aitken, V. Sorkin, Z. G. Yu, Z. Wu, Y.-W. Zhang*. Modified Embedded-Atom Method Potentials for the Plasticity and Fracture Behaviors of Unary HCP Metals. Adv. Theory Simul. 2021, 2100377. Special issue.

10. S. Chen, J. H. R. Yune, Z.-Q. Zhang, Z. Liu, N. Sridhar, L. Y. L. Wu, S. Chng, J. Liu*. Multiscale Modeling to Predict the Hydrophobicity of an Experimentally Designed Coating. J. Phys. Chem. C 2020, 124, 9866–9875.

11. S. Chen, J. Gao, M. S. Bharathi, G. Zhang, V. Sorkin, H. Ramanarayan, Y.-W. Zhang*. Unveiling the Competitive Role of Etching in Graphene Growth during Chemical Vapor Deposition. 2D Mater. 2019, 6, 015031.

12. S. Chen, Y. Cheng, G. Zhang*, Y.-W. Zhang. Spontaneous Directional Motion of Water Molecules in Single-Walled Carbon Nanotube with a Stiffness Gradient. Nanoscale Adv. 2019, 1, 1175–1180.

13. S. Chen, J. Gao, M. S. Bharathi, Y.-W. Zhang*.A Kinetic Monte Carlo Study for Mono- and Bi-layer Growth of MoS2 during Chemical Vapor Deposition. Acta Phys. -Chim. Sin. 2019, 35, 1119–1127. Special issue.

14. S. Chen, Y. Cheng, G. Zhang*, Q. Pei, Y.-W. Zhang. Anisotropic Wetting Characteristics of Water Droplets on Phosphorene: Roles of Layer and Defect Engineering. J. Phys. Chem. C 2018, 122, 4622–4627.

15. S. Chen, Y. Cheng*, H. Gao*. Machine Learning for High-Entropy Alloys. In: Y. Cheng, T. Wang, G. Zhang (eds) Artificial Intelligence for Materials Science. Springer Series in Materials Science 2021, 312, 21–58. Springer, Cham. (Book chapter)


# Co-first author. *Corresponding author.






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