工作经历：

2024.11至今        上海大学  材料基因组工程研究院      教授

2023.01-2024.11      上海大学  材料基因组工程研究院  副教授

2021.04-2022.12      新加坡科技研究院(A*STAR)  高性能计算研究所(IHPC)  二级科学家(Scientist II)

2016.11-2021.03      新加坡科技研究院(A*STAR)  高性能计算研究所(IHPC)  一级科学家(Scientist I)

教育背景：

2011.09-2016.10      清华大学  摩擦学国家重点实验室  博士

2007.09-2011.06      北京科技大学  机械工程  学士

主要荣誉：

2024年   国家级海外高层次青年人才

2022年   上海市领军人才(海外)

研究方向

(1) 多主元合金微纳米力学和多尺度力学；

(2) 基于力学信息学的金属材料设计；

(3) 低维材料表界面力学行为及机理。

欢迎力学、机械和材料专业背景的博士后、硕博研究生、本科生等学生和学者加入。

代表性成果

多主元合金微纳米力学和多尺度力学方向：

[1]        S.     Chen,     P. Liu, Q. Pei, Z. G. Yu, Z. H. Aitken, W. Li, Z. Wu, R. Banerjee, D. J.     Srolovitz^*, P. K. Liaw^*, Y.-W.     Zhang^*. Ideal     Plasticity and Shape Memory of Nanolamellar High-Entropy Alloys. Sci.     Adv. 2023, 9, eadi5817.

[2]        S.     Chen,     T. Wang, X. Li, Y. Cheng^*, G. Zhang^*, H. Gao^*.     Short-Range Ordering and its Impact on Thermodynamic Property of     High-Entropy Alloys. Acta Mater. 2022, 238,     118201.

[3]        S.     Chen, Z. H. Aitken,     S. Pattamatta,     Z. Wu,     Z. G. Yu,     D. J. Srolovitz^*, P. K. Liaw^*, Y.-W.     Zhang^*.     Simultaneously Enhancing the Ultimate Strength and Ductility of     High-Entropy Alloys via Short-Range Ordering. Nat. Commun. 2021,     12, 4953. Featured article. ESI highly cited paper.

[4]        S.     Chen, Z. H. Aitken,     S. Pattamatta,     Z. Wu,     Z. G. Yu,     D. J. Srolovitz^*, P. K. Liaw^*, Y.-W.     Zhang^*. Crack     Tip Dislocation Activity in Refractory High-Entropy Alloys. Inter. J.     Mech. Sci. 2024, 262, 108753.

[5]        S.     Chen, Z. H. Aitken,     S. Pattamatta,     Z. Wu,     Z. G. Yu,     D. J. Srolovitz^*, P. K. Liaw^*, Y.-W.     Zhang^*. Short-Range     Ordering Alters the Dislocation Nucleation and Propagation in Refractory     High-Entropy Alloys. Mater. Today 2023, 65, 14–25.

[6]        S. Chen, Z. H. Aitken^*, Z. Wu, Z. Yu, R. Banerjee,     Y.-W. Zhang.     Hall-Petch     and Inverse Hall-Petch Relations in High-Entropy CoNiFeAl_xCu_1-x     Alloys. Mater. Sci. Eng. A 2020, 773, 138873.

基于力学信息学的金属材料设计方向：

[1]    J.-M.     Pu, S. Chen^*, T.-Y. Zhang^*.     Machine Learning Assisted Crystallographic Reconstruction from Atom Probe     Tomographic Images. J. Phys. Condens. Matter. 2025, 37,     035901.

[2]        J.     Zhang, H. Zhang^*, J. Xiong, S. Chen^*, G.     Zhang^*.     Tuning Lattice Thermal Conductivity in NbMoTaW Refractory High-Entropy     Alloys: Insights from Molecular Dynamics using Machine Learning Potential. J.     Appl. Phys. 2024, 136, 155106.

[3]        S.     Chen, Z. H. Aitken,     V.     Sorkin,     Z. G. Yu,     Z. Wu,     Y.-W. Zhang^*.     Modified Embedded-Atom Method Potentials for the Plasticity and Fracture     Behaviors of Unary HCP Metals. Adv. Theory Simul. 2021, 2100377.     Special     issue.

[4]        S.     Chen, Y. Cheng^*, H. Gao^*. Machine     Learning for High-Entropy Alloys. In: Y. Cheng, T. Wang, G. Zhang (eds)     Artificial Intelligence for Materials Science. Springer Series in     Materials Science 2021, 312, 21–58. Springer, Cham. (Book     chapter).

[5]        S.     Chen, Z. H. Aitken,     S. Pattamatta,     Z. Wu,     Z. G. Yu,     D. J. Srolovitz^*, P. K. Liaw^*, Y.-W.     Zhang^*.     Chemical-Affinity Disparity and Exclusivity Drive Atomic Segregation,     Short-Range Ordering, and Cluster Formation in High-Entropy Alloys. Acta     Mater. 2021, 206, 116638.

低维材料表界面力学行为及机理方向：

[1]        S. Chen, J. Gao, M.     S. Bharathi,     G. Zhang,     V. Sorkin,     H. Ramanarayan,     Y.-W. Zhang^*. Origin     of Ultrafast Growth of Monolayer WSe₂ via Chemical Vapor     Deposition. npj Comput. Mater. 2019, 5, 28.

[2]        S. Chen, J. Gao, M.     S. Bharathi,     G. Zhang,     V. Sorkin,     H. Ramanarayan, Y.-W. Zhang^*. A     Kinetic Monte Carlo Model for the Growth and Etching of Graphene during     Chemical Vapor Deposition. Carbon 2019, 146, 399–405.

[3]        S. Chen, J. Gao, M.     S. Bharathi,     G. Zhang,     Y.-W. Zhang^*.     Etching Mechanisms, Kinetics and Pattern Formation in Multilayered WSe₂.     Mater. Today Adv. 2020, 7, 100075.

[4]        S. Chen, J. Gao, M.     S. Bharathi,     G. Zhang,     M. Yang,     J. Chai,     S. Wang,     D. Chi,     Y.-W. Zhang^*.     Revealing the Grain Boundary Formation Mechanism and Kinetics during     Polycrystalline MoS₂ Growth. ACS Appl. Mater. Interfaces 2019,     11, 46090–46100.

[5]        S. Chen, J. H.     R. Yune,     Z.-Q. Zhang,     Z. Liu,     N. Sridhar,     L. Y. L. Wu,     S. Chng,     J. Liu^*.     Multiscale Modeling to Predict the Hydrophobicity of an Experimentally     Designed Coating. J. Phys. Chem. C 2020, 124,     9866–9875.

[6]        S. Chen, J. Gao, M.     S. Bharathi,     G. Zhang,     V. Sorkin,     H. Ramanarayan, Y.-W. Zhang^*.     Unveiling the Competitive Role of Etching in Graphene Growth during     Chemical Vapor Deposition. 2D Mater. 2019, 6, 015031.

^*Corresponding     author.

This page is updated on 2024.12.09.